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The IXSH40N60A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 48 A at 25°C. The device utilizes PT (Plasma Trapped) technology to achieve low conduction losses. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.7 V at 15 V gate drive and 24 A collector current, with a typical turn-on time of 100 ns and turn-off time of 450 ns under standard test conditions.
Verify the specific suffix 'A' against the manufacturer's datasheet to confirm pinout and thermal characteristics match the design requirements. Check for obsolescence status as IXYS products may transition to Littelfuse branding or newer series. Ensure the TO-247AD package footprint aligns with the PCB layout before finalizing procurement.
Select this component when a 600V IGBT with moderate current handling is required for high-frequency applications. The TO-247AD package facilitates efficient heat dissipation through direct mounting. Compare the 2.7 V saturation voltage against alternative models to ensure thermal management meets system constraints under expected load conditions.
This part belongs to the HiPerFAST™ family of IGBTs from IXYS, designed for general-purpose power switching. The series emphasizes low on-state voltage to reduce power dissipation in medium-power converters. It serves as a discrete solution for replacing older generation transistors in established industrial designs requiring robust voltage ratings.
Direct substitutes include the IXSM40N60A, which shares similar electrical specifications and package form factor. Verify that any replacement maintains the same TO-247AD mechanical dimensions and thermal resistance values to ensure compatibility with existing heatsinking infrastructure.