IXSH45N100

Overview

The IXSH45N100 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 1000 V and a continuous collector current rating of 75 A. The device is housed in a TO-247AD through-hole package, suitable for high-power applications. It operates within a temperature range of -55°C to +150°C and has a power dissipation capacity of 300 W.

Feature Summary

• Guaranteed short-circuit safe operating area (SOA) capability
• Low saturation voltage for reduced on-state conduction losses
• Compliance with international standard package dimensions

Applications

• Motor drives
• Switch-mode power supplies
• Inverters

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation to confirm electrical parameters and mechanical dimensions before integration. Ensure that thermal management solutions align with the specified power dissipation limits and junction temperature ratings. Cross-reference ordering information directly with authorized IXYS distributors to avoid counterfeit components.

Selection Notes

Select this component for designs requiring high voltage blocking and substantial current handling in a standard through-hole footprint. Evaluate the trade-off between low saturation voltage and switching speed relative to the application's efficiency requirements. Confirm that the gate drive circuitry supports the required voltage levels for optimal performance.

Part Context

This IGBT belongs to the IXSH series from IXYS, designed for general-purpose high-power switching. The series emphasizes robustness and reliability in industrial environments. The TO-247AD package provides a balance between thermal performance and ease of mounting compared to larger modules.

Replacement Considerations

Direct substitutes must match the 1000V/75A rating and TO-247AD package. Verify pinout compatibility and thermal characteristics when considering alternatives from other manufacturers.