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The IXYS IXSR35N120BD1 is a high-voltage IGBT with an integrated anti-parallel diode, designed for robust power switching applications. It features a 1200V collector-emitter breakdown voltage and a continuous collector current of 35A at 25°C. The device utilizes GenX3 technology to achieve low saturation voltage and fast switching characteristics, including a typical turn-off time of 140ns. Packaged in a TO-247-3L case, it supports junction temperatures up to 175°C, ensuring reliable operation in demanding thermal environments.
Verify the specific suffix BD1 against the manufacturer datasheet to confirm package type and terminal configuration. Ensure the ordering part number matches the exact electrical ratings required for the target circuit design. Cross-reference the manufacturing date code to ensure component freshness and compliance with current RoHS standards before finalizing procurement orders.
Select this component when a high-voltage switch with integrated freewheeling functionality is required. The 35A rating suits medium-power industrial applications. Consider the thermal resistance values for heatsink sizing. Compare switching energy losses against alternative devices if efficiency is critical. Verify gate drive voltage compatibility with the specified threshold levels.
This device belongs to IXYS's high-voltage IGBT portfolio, specifically utilizing GenX3 silicon technology. It is engineered to replace older generation discrete solutions by combining the switch and diode in a single package. This integration reduces board space and parasitic inductance compared to separate component arrangements.
Direct replacements include the IXSK35N120BD1 and IXSX35N120AU1. These parts share similar pinouts and electrical characteristics within the same product family. Verify mechanical dimensions and thermal parameters before substituting to ensure compatibility with existing PCB footprints and cooling systems.