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Product Detailed Parameters
- Description：IGBT PT 1200V 30A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 15A
- Power - Max：150 W
- Switching Energy：1.5mJ (off)
- Input Type：Standard
- Gate Charge：57 nC
- Td (on/off) @ 25°C：30ns/148ns
- Test Condition：960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXST15N120B is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a single configuration housed in a TO-263AA surface-mount package. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 30 A. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Improved short-circuit safe operating area (SCSOA) capability
- Low switching losses and low saturation voltage
- MOS gate drive for operational simplicity
Applications
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify the specific datasheet revision and electrical parameters directly with the manufacturer or authorized distributors before integration. Confirm that the TO-263AA package dimensions match the target PCB footprint. Ensure thermal management solutions are adequate for the specified power dissipation limits under actual operating conditions.
Selection Notes
Select this component for applications requiring high-voltage switching with improved ruggedness against short circuits. The surface-mount TO-263AA package facilitates automated assembly and reduced mounting time compared to through-hole alternatives. Consider the trade-off between low saturation voltage and switching performance for efficiency optimization.
Part Context
This IGBT belongs to the S Series, which emphasizes enhanced short-circuit safe operating area capabilities. It utilizes standard international JEDEC packaging standards to ensure compatibility with common manufacturing processes. The technology leverages silicon semiconductor properties optimized for high-power density applications.
Replacement Considerations
Check for direct pin-compatible substitutes within the IXYS S Series lineup. Verify that alternative devices meet the same 1.2 kV voltage rating and 30 A current requirements. Ensure thermal resistance characteristics are comparable to maintain existing cooling system designs.
