IXST24N60BD1

Overview

The IXST24N60BD1 is a high-voltage N-channel MOSFET from IXYS, designed for power switching applications. It features a 600V breakdown voltage and a continuous drain current of 24A at 25°C case temperature. The device utilizes IXYS's Super Junction technology to achieve low on-state resistance, enhancing efficiency in hard-switching circuits. Key electrical parameters include a maximum gate-source voltage of ±20V and a typical threshold voltage range. The component is housed in an insulated TO-247AD package, providing robust thermal performance and mechanical stability for industrial power supplies and motor control systems.

Feature Summary

• Super Junction technology for optimized trade-off between conduction losses and switching speed
• Insulated TO-247AD package enabling direct heatsink mounting with electrical isolation
• Low gate charge characteristics supporting high-frequency operation
• Enhanced avalanche energy rating for improved ruggedness in inductive load switching

Applications

• High-efficiency DC-DC converters
• Motor drive inverters
• Uninterruptible power supply (UPS) systems
• Industrial welding equipment

Procurement Notes

Verify the specific suffix 'BD1' against the manufacturer's latest datasheet to confirm pinout configuration and packaging variant. Ensure the supplier provides traceability documentation compliant with automotive or industrial standards if required by your application. Cross-reference the lot code for authenticity. Confirm thermal interface material compatibility with the TO-247AD base plate before integration into your thermal management design.

Selection Notes

Select this component when designing circuits requiring high voltage blocking capability combined with moderate current handling. The Super Junction architecture offers superior figure-of-merit compared to traditional planar MOSFETs in similar voltage classes. Evaluate the thermal resistance junction-to-case parameter against your heatsink design constraints. Consider the gate charge specifications if operating at frequencies exceeding standard utility ranges to minimize switching losses.

Part Context

This part belongs to IXYS's high-voltage MOSFET portfolio, leveraging proprietary Super Junction structures. It serves as a replacement for older generation planar devices in 600V applications. The series is engineered for industries demanding higher power density and reduced system size. It complements other discrete power semiconductors in complete power conversion modules.

FAQ

What is the maximum repetitive peak drain current?

The datasheet specifies a pulsed drain current limit significantly higher than the continuous rating, typically defined by the single-pulse avalanche energy capabilities.

Does the TO-247AD package provide electrical isolation?

Yes, the insulated version of the TO-247 package allows the drain terminal to be mounted directly to a heatsink without requiring an additional insulating washer, provided the heatsink is not electrically live.