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Product Detailed Parameters
- Description：IGBT PT 600V 75A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 40A
- Power - Max：280 W
- Switching Energy：1.8mJ (off)
- Input Type：Standard
- Gate Charge：190 nC
- Td (on/off) @ 25°C：50ns/110ns
- Test Condition：480V, 40A, 2.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXST40N60B is a surface-mount Insulated Gate Bipolar Transistor (IGBT) from IXYS, housed in a TO-268AA package. It features a 600V collector-emitter breakdown voltage and supports a continuous collector current of 75A with a pulsed current rating of 150A. The device exhibits a maximum saturation voltage of 2.2V at 40A and 15V gate drive. Key switching parameters include a turn-on time of 50ns and a turn-off time of 110ns at 25°C. Total switch-off energy is 1.8mJ under test conditions of 480V, 40A, and 2.7Ω gate resistance. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- PT technology for optimized switching performance
- Surface mount construction for automated assembly
- Standard input type compatibility
Applications
- High-frequency power conversion circuits
- Motor drive inverters
- Industrial power supplies
Procurement Notes
Verify the specific suffix and marking on the physical component against the manufacturer's datasheet to confirm authenticity. Check for obsolescence notices as this part may be discontinued. Ensure the TO-268AA footprint matches the design layout. Confirm thermal management requirements align with the 280W power dissipation limit under intended operating conditions.
Selection Notes
Select this component for applications requiring a compact surface-mount IGBT with moderate current handling capabilities. The TO-268AA package offers a balance between thermal performance and board space efficiency. Consider the 2.2V saturation voltage for conduction loss calculations and the 1.8mJ switch-off energy for switching loss analysis in high-frequency designs.
Part Context
This device belongs to the IXYS IGBT portfolio, designed for general-purpose power switching. The TO-268AA package is a variant of the DPAK form factor, suitable for surface-mount technology. It integrates an N-channel IGBT structure with PT (Plasma Trimming) technology to enhance switching speed and reduce tail current effects compared to standard planar technologies.
Replacement Considerations
- IXST40N60B
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter breakdown voltage (Vces) is 600V.
What is the typical gate charge value?
The total gate charge (Qg) is 190nC.
Is this component available in a through-hole package?
No, the IXST40N60B is specifically designed for surface-mount installation in the TO-268AA package.
