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Product Detailed Parameters
- Description：IGBT PT 1200V 75A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 45A
- Power - Max：300 W
- Switching Energy：13mJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：36ns/360ns
- Test Condition：960V, 45A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXST45N120B is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 1200V collector-emitter breakdown voltage and a continuous collector current of 75A at 25°C. The device utilizes XPT thin-wafer technology to achieve low saturation voltage, specified as 3.0V typical. Packaged in a TO-268-3 (D3Pak) surface-mount format, it supports through-hole installation styles. Key electrical parameters include a maximum gate-emitter voltage of ±20V, a power dissipation rating of 300W, and a junction temperature range from -55°C to +175°C.
Feature Summary
- Utilizes IXYS XPT thin-wafer technology for optimized trade-off between conduction and switching losses.
- Features a robust TO-268-3 package designed for high-power density applications.
- Provides high thermal stability with an extended operating junction temperature up to 175°C.
Applications
- Industrial motor drives
- High-frequency welding inverters
- Uninterruptible power supplies (UPS)
- Switch-mode power supplies
Procurement Notes
Verify the specific suffix and revision against the official IXYS datasheet to ensure compatibility with required thermal and electrical specifications. Confirm that the TO-268-3 footprint matches the target PCB design. Check lifecycle status for availability constraints and lead times associated with manufacturing batches.
Selection Notes
Select this component for applications requiring high voltage blocking capability combined with moderate current handling in a surface-mount form factor. Consider the 3.0V saturation voltage for efficiency requirements and evaluate the thermal resistance characteristics of the TO-268-3 package against the system's heat sinking capabilities.
Part Context
This IGBT belongs to IXYS' portfolio of high-voltage power semiconductors designed for industrial and automotive environments. It complements other devices in the IXST series, offering a balance of performance and reliability. The part is engineered to meet the demands of modern power electronics where size reduction and thermal efficiency are critical.
Replacement Considerations
Direct substitutes may include other 1200V, 75A IGBTs in TO-268 packages from IXYS or competitors, provided pinout and electrical ratings match. Verify switching energy and gate charge parameters to ensure equivalent dynamic performance in existing circuits.
