IXSX80N60B

Overview

The IXSX80N60B is a high-current Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 600V collector-emitter breakdown voltage and supports continuous collector currents up to 80A. The device utilizes the PLUS247 package, designed for clip or spring mounting to enhance thermal performance and power density. Key electrical characteristics include low saturation voltage for minimized conduction losses and fast switching capabilities.

Feature Summary

• High current handling with short circuit safe operating area capability
• Low VCE(sat) design for minimum on-state conduction losses
• PLUS247 package optimized for clip or spring mounting

Applications

• AC motor speed control systems
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with your thermal management design. Confirm that the PLUS247 package mounting requirements align with your assembly process, as this component is intended for clip or spring mounting rather than standard soldering methods.

Selection Notes

Select this IGBT for applications requiring high current density and robust short-circuit tolerance. The PLUS247 package offers space savings compared to traditional modules. Ensure the gate drive circuitry supports the MOS gate turn-on requirements for simplicity and reliable switching performance in medium-frequency operations.

Part Context

This component belongs to the IXYS high-power IGBT portfolio, specifically engineered for industrial power conversion. It integrates advanced silicon technology to balance switching speed and conduction efficiency. The device is part of a family designed to replace discrete solutions with higher reliability and reduced system footprint in demanding power electronics environments.