IXTA8N50P

Single FETs, MOSFETs Overview

IXTA8N50P is a single N-Channel enhancement mode Power MOSFET manufactured by IXYS. It utilizes PolarHV technology and is housed in a TO-3P-3 (ISOPLUS 220) through-hole package. The device features a 500 V drain-source breakdown voltage and an 8 A continuous drain current rating. Key electrical parameters include a maximum on-resistance of 1.4 Ohms, a gate threshold voltage of 5 V, and a total gate charge of 26 nC. It supports a maximum power dissipation of 125 W within an operating temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Features high-voltage PolarHV silicon chip technology for robust performance.
• Includes an avalanche-rated design capable of handling repetitive avalanche energy.
• Provides fast intrinsic body diode characteristics for efficient switching.
• Offers isolated mounting surface with low drain-to-tab capacitance.

Single FETs, MOSFETs Applications

• DC-DC converters
• Battery chargers
• Switched-mode power supplies
• AC motor control

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-3P-3 package dimensions match your thermal management and PCB layout requirements. Ensure the gate drive circuitry aligns with the specified threshold voltage and gate charge characteristics for optimal switching performance.

Single FETs, MOSFETs Selection Notes

Select this component when a rugged, high-voltage N-Channel MOSFET is required for applications demanding avalanche capability. The TO-3P-3 package facilitates easy mechanical mounting and thermal dissipation via the isolated tab. Consider the trade-off between the 1.4 Ohm on-resistance and the 8 A current limit against alternative packages like TO-247 if higher current density is needed.

Single FETs, MOSFETs Part Context

The IXTA8N50P belongs to the IXYS PolarHV series of high-voltage power MOSFETs. This series is engineered for industrial and consumer power supply applications requiring high reliability. The part integrates advanced trench technology to achieve superior figure-of-merit compared to older planar devices, ensuring efficient operation in high-frequency switching environments.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other IXYS PolarHV parts in the TO-3P-3 package, such as IXTQ8N50P or IXTH8N50P, verifying pinout compatibility and exact electrical ratings. Ensure any substitute maintains the same avalanche energy rating and thermal resistance specifications.