IXTH2N150

Single FETs, MOSFETs Overview

The Littelfuse IXTH2N150 is an N-channel enhancement mode power MOSFET housed in a TO-247 package. It features a drain-source voltage rating of 1500 V and a continuous drain current of 2 A at 25°C case temperature. The device has a maximum on-state resistance of 9.2 Ω at VGS = 10 V. It includes a fast intrinsic body diode with a reverse recovery time of 377 ns. Thermal management relies on a junction-to-case thermal resistance of 0.73 °C/W, supporting operation within a -55°C to +150°C junction temperature range.

Single FETs, MOSFETs Feature Summary

• High-voltage capability suitable for demanding power switching environments
• Fast intrinsic diode performance for efficient rectification
• Robust packaging designed for high power density and easy mounting

Single FETs, MOSFETs Applications

• High voltage power supplies
• Capacitor discharge applications
• Pulse circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer origin, as the datasheet references IXYS Corporation while the brand is listed as Littelfuse Inc. Confirm that the component meets all required electrical specifications for your circuit design before procurement. Ensure compatibility with standard TO-247 mounting hardware and verify lead-free compliance if necessary for your assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high blocking voltage up to 1500 V. Consider the relatively high on-state resistance of 9.2 Ω, which impacts conduction losses at higher currents. Evaluate the thermal requirements carefully given the 170 W power dissipation rating at 25°C case temperature. Ensure gate drive voltages remain within the specified ±30 V continuous limit.

Single FETs, MOSFETs Part Context

This discrete MOSFET belongs to the high-voltage power semiconductor category. It serves as a solid-state switch for managing significant electrical potentials in industrial and commercial equipment. The TO-247 form factor provides a standardized interface for heat sinking and PCB integration, facilitating its use in systems where space efficiency and thermal performance are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

Consult official Littelfuse or IXYS documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package type or general voltage ratings. Verify that any alternative device matches the specific 1500 V breakdown and 2 A current limits required by the application.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) is rated at 1500 V.

Does the device include a body diode?

Yes, it features a fast intrinsic diode with a reverse recovery time of 377 ns.

What is the operating temperature range?

The junction temperature range is from -55°C to +150°C.