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IXTH2N150L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 1500V 2A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXTH2N150L
- Description：MOSFET N-CH 1500V 2A TO247
- Series：Linear
- Mfr：Littelfuse Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1500 V
- Current - Continuous Drain (Id) @ 25°C：2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：15Ohm @ 1A, 20V
- Vgs(th) (Max) @ Id：8.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：72 nC @ 20 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1470 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：290W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 (IXTH)
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for IXTH2N150L
Single FETs, MOSFETs Overview
The Littelfuse IXTH2N150L is an N-channel enhancement mode MOSFET manufactured by Littelfuse. It utilizes silicon technology and features a TO-247-3 package. The device is designed as a fast intrinsic diode switch with avalanche rating capabilities.
Single FETs, MOSFETs Feature Summary
- Enhancement mode operation for reliable switching control
- Integrated fast intrinsic body diode for efficient conduction
- Avalanche rated construction for robust energy handling
Single FETs, MOSFETs Applications
- High voltage power conversion circuits
- Inductive load switching applications
- General purpose solid state switching systems
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation on official datasheets, as the IXYS brand was acquired by Littelfuse. Confirm that the specific suffix 'L' corresponds to the intended avalanche-rated variant in current Littelfuse documentation. Ensure the component meets required safety certifications for the target deployment environment before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-voltage N-channel switching with integrated fast recovery characteristics. The TO-247-3 package provides suitable thermal management for moderate power levels. Verify that the avalanche capability aligns with the circuit's inductive load requirements and transient energy specifications.
Single FETs, MOSFETs Part Context
This part belongs to the IXTH series of N-channel MOSFETs, which are characterized by fast intrinsic diodes and avalanche ratings. The series is engineered for high-voltage power switching applications where robust performance and reliable turn-off characteristics are critical for system efficiency and longevity.
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