IXTP130N065T2

$1.55

Description：MOSFET N-CH 65V 130A TO220AB
Series：TrenchT2™
Mfr：IXYS
Package：Tube

SKU:ec4cc74f3839 Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXTP130N065T2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 65V 130A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTP130N065T2

Description：MOSFET N-CH 65V 130A TO220AB
Series：TrenchT2™
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：79 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4800 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：250W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IXTP130N065T2

IXTP130N065T2

Single FETs, MOSFETs Overview

The IXTP130N065T2 is an N-Channel Enhancement Mode MOSFET from the TrenchT2 series, rated for 65V drain-source voltage and 130A continuous drain current at case temperature. It features avalanche rating capability and operates within a junction temperature range of -55°C to 175°C. The device supports a maximum gate-source voltage of ±20V and has a typical power dissipation of 250W under case conditions.

Single FETs, MOSFETs Feature Summary

N-Channel enhancement mode construction
Avalanche rated design
High thermal stability up to 175°C

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor control applications
Power switching modules

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Confirm package integrity and pin alignment against original specifications. Request batch traceability documentation to ensure compliance with quality standards. Validate electrical parameters using official test data sheets prior to integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-current switching requirements where avalanche ruggedness is necessary. Consider thermal management solutions given the 250W dissipation rating. Evaluate alternative sources as the part is no longer manufactured by the original producer.

Single FETs, MOSFETs Part Context

This device belongs to IXYS' TrenchT2 family of power MOSFETs, designed for efficient power conversion. It utilizes advanced trench gate technology to achieve low on-resistance and fast switching speeds. The product line targets industrial and automotive power supply applications requiring robust performance.