IXTP16N50P

Single FETs, MOSFETs Overview

The Littelfuse IXTP16N50P is an N-channel enhancement mode Power MOSFET rated for a drain-source voltage of 500 V and a continuous drain current of 16 A at 25°C case temperature. It features a maximum on-state resistance of 400 mΩ at VGS = 10 V and supports a repetitive pulsed drain current of 35 A. The device is avalanche rated with an energy capability of 750 mJ and includes a fast intrinsic body diode with a reverse recovery time of 400 ns. Thermal management relies on a junction-to-case thermal resistance of 0.42 °C/W, allowing operation within a -55°C to +150°C junction temperature range.

Single FETs, MOSFETs Feature Summary

• Avalanche rated for robust transient handling
• Fast intrinsic source-drain diode
• Low package inductance design

Single FETs, MOSFETs Applications

• Switched-mode power supplies
• Resonant-mode power supplies
• DC-DC converters
• AC and DC motor drives
• Robotics and servo controls

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant during procurement, as the IXTP suffix denotes the TO-220 form factor. Confirm that the component meets the required thermal dissipation capabilities for your application, given the 300 W power rating at 25°C case temperature. Ensure compatibility with standard mounting hardware, noting the specified torque limits for secure installation.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V blocking capability and 16 A continuous current are required in a standard through-hole package. The low on-state resistance aids efficiency in high-current switching applications. Consider the avalanche rating if the circuit is prone to inductive load transients. Evaluate the thermal resistance against your heatsinking strategy to maintain junction temperatures within safe operating limits.

Single FETs, MOSFETs Part Context

This part belongs to the PolarHT™ series of N-channel standard MOSFETs originally manufactured by IXYS Corporation before being acquired by Littelfuse. The series offers international standard packages including TO-220, TO-263, and TO-3P variants. These devices are engineered for high power density and easy mounting in industrial and commercial power systems.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include the IXTA16N50P (TO-263) and IXTQ16N50P (TO-3P), which share identical electrical characteristics but differ in physical package dimensions.