IXTP20N65X

Single FETs, MOSFETs Overview

The IXTP20N65X is a single N-channel power MOSFET from the IXYS HiPerFET X2-Class series. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 650 V, a continuous drain current (Id) of 20 A at case temperature, and a maximum gate-source voltage (Vgs) of ±30 V. The device features a typical on-resistance (Rds On) of 185 mΩ at 10 A and 10 V, with a gate charge (Qg) of 27 nC. It supports a power dissipation of 290 W at case temperature and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 650 V drain-source breakdown rating for robust switching applications.
• Low on-resistance design optimized for efficient conduction in power conversion circuits.
• Enhanced thermal performance allowing high power dissipation in standard through-hole packages.

Single FETs, MOSFETs Applications

• General-purpose power switching
• DC-DC converter topologies
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official datasheets, as variations like IXTP20N65X2 may exist with different packaging or minor parameter tolerances. Confirm RoHS compliance status directly with the manufacturer documentation before integration. Ensure the ordering part number matches the required pinout and thermal characteristics for your specific PCB layout constraints.

Single FETs, MOSFETs Selection Notes

Select this component when a 650 V rating and 20 A continuous current capacity are required in a cost-effective TO-220 form factor. Compare the 185 mΩ on-resistance against alternative devices to ensure thermal management requirements are met within the 290 W dissipation limit. Consider the 27 nC gate charge for driver compatibility in medium-frequency switching applications.

Single FETs, MOSFETs Part Context

This device belongs to the IXYS HiPerFET family, specifically the X2-Class series designed for high-efficiency power management. It serves as a discrete replacement for integrated power modules in lower-power industrial and consumer electronics. The TO-220-3 package provides a balance between thermal performance and ease of manual assembly or automated placement.

Single FETs, MOSFETs Replacement Considerations

The IXTP20N65X2 is a documented variant within the same product line. Verify if the '2' suffix indicates a specific tape-and-reel packaging option or slight parameter variation compared to the tube-packaged standard version. Cross-reference pinouts to ensure direct compatibility without circuit modification.