IXTV22N50P

Description：MOSFET N-CH 500V 22A PLUS220
Series：PolarHV™
Mfr：IXYS
Package：Tube

SKU:aa0c47398bfa Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXTV22N50P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 500V 22A PLUS220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTV22N50P

Description：MOSFET N-CH 500V 22A PLUS220
Series：PolarHV™
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：270mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2630 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PLUS220
Package / Case：TO-220-3, Short Tab

Single FETs, MOSFETs datasheet and documents for IXTV22N50P

IXTV22N50P

Single FETs, MOSFETs Overview

The IXTV22N50P is an N-Channel Enhancement Mode Power MOSFET manufactured by IXYS. It features a 500 V drain-source breakdown voltage and a continuous drain current of 22 A at case temperature. The device exhibits a maximum on-resistance of 350 mΩ. It operates within a junction temperature range of -55°C to +150°C and supports a power dissipation of 400 W. The component utilizes a TO-247-3 through-hole package.

Single FETs, MOSFETs Feature Summary

Avalanche rated for unclamped inductive switching applications
Fast intrinsic body diode characteristics
Low package inductance design for easy driving and protection

Single FETs, MOSFETs Applications

High power density switching circuits
Space-constrained power management systems
Inductive load control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the TO-247-3 pinout matches the target PCB footprint. Ensure thermal management solutions accommodate the specified 400 W power dissipation rating under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-Channel MOSFET with avalanche capability is required. The low on-resistance and fast diode make it suitable for high-efficiency switching. Consider the TO-247-3 package constraints for board layout and mounting requirements.

Single FETs, MOSFETs Part Context

This part belongs to the PolarHV series of power MOSFETs from IXYS. These devices are designed for high-voltage applications requiring reliable performance in harsh environments. The series emphasizes durability and ease of integration into standard power electronics architectures.