IXTY26P10T

Single FETs, MOSFETs Overview

The IXTY26P10T is a P-Channel Power MOSFET from the Trench Gate Series by Littelfuse. It features a -100V drain-source breakdown voltage and supports a continuous drain current of -26A. The device exhibits a maximum on-resistance (Rds(on)) of 0.09 ohms. Packaged in a surface-mount TO-252 (DPAK) case, it is designed for high-side switching applications where simple ground-referenced drive circuits are utilized.

Single FETs, MOSFETs Feature Summary

• Utilizes Trench Gate technology to reduce component count and simplify drive circuitry.
• Supports complementary power output stages when paired with corresponding N-channel MOSFETs.
• Enables integration of power half-bridge stages with simplified driving requirements.

Single FETs, MOSFETs Applications

• High-side switching applications
• Complementary power output stages
• Power half-bridge configurations

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Littelfuse documentation to confirm package type and tape/reel specifications. Ensure the requested variant matches the required RoHS compliance status and shipping restrictions, as availability may vary by sales area. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current stock status and lead times before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a P-Channel MOSFET with a -100V rating and -26A current capacity. The low on-resistance of 0.09 ohms makes it suitable for efficient power management. Consider its compatibility with N-channel counterparts for building balanced half-bridge topologies that benefit from simplified gate drive architectures.

Single FETs, MOSFETs Part Context

This device belongs to the Trench Gate Series of P-Channel MOSFETs manufactured by Littelfuse. The series is engineered to optimize performance in high-side switching scenarios. The TO-252 package provides a compact solution for surface-mount assembly, balancing thermal performance with board space constraints in modern electronic equipment.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters with alternative manufacturers if sourcing directly from Littelfuse is not feasible.

Single FETs, MOSFETs FAQ

What is the primary advantage of the Trench Gate technology in this MOSFET?

It allows designers to reduce component count, simplifying drive circuits and improving overall cost structure.

Is this MOSFET suitable for high-side switching?

Yes, it is well-suited for high-side switching applications where a simple drive circuit referenced to ground can be employed.