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Product Detailed Parameters
- Description：IGBT 600V 120A TO-263AA
- Series：XPT™, GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 36A
- Power - Max：600 W
- Switching Energy：670µJ (on), 1.2mJ (off)
- Input Type：Standard
- Gate Charge：70 nC
- Td (on/off) @ 25°C：27ns/150ns
- Test Condition：360V, 36A, 5Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
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Overview
The IXXA50N60B3 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 and XPT series, housed in a D2PAK-3 (TO-263-3) surface-mount package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 120 A at 25°C, with a peak pulsed current capability of 200 A. The device exhibits a maximum collector-emitter saturation voltage of 1.55 V and a power dissipation rating of 600 W. Operating within a junction temperature range of -55°C to +175°C, it includes an integrated anti-parallel diode with a gate-emitter voltage limit of ±20 V.
Feature Summary
- Utilizes XPT technology for optimized trade-offs between conduction losses and switching performance.
- Incorporates GenX3 gate architecture to ensure robust short-circuit withstand capability and reliable operation under high thermal stress.
- Features a low saturation voltage characteristic to minimize power loss during conduction states.
Applications
- High-frequency switch-mode power supplies
- Motor drive inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout compatibility and electrical tolerances. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure ordering quantities align with standard tube packaging constraints defined by the supplier.
Selection Notes
Select this component for applications requiring surface-mount mounting with high current density. Compare the 1.55 V saturation voltage against system efficiency targets. Evaluate thermal management requirements based on the 600 W dissipation rating and TO-263-3 package thermal resistance characteristics.
Part Context
This part belongs to the IXYS IXXA50N60 family of 600V IGBTs. It shares core electrical specifications with other variants in the series but differs primarily in its surface-mount D2PAK-3 packaging compared to through-hole alternatives like the IXXP or IXXH series.
Replacement Considerations
Direct substitutes include IXXP50N60B3 and IXXH50N60B3D1, which share identical electrical ratings but utilize different packages (TO-220-3 and TO-247-3 respectively). Cross-package replacement requires PCB layout modification.
