IXXH110N65C4

Overview

The IXXH110N65C4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the Trench series, designed for high-power switching applications. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 110 A at 25°C. It operates within a temperature range of -55°C to +175°C. Key electrical parameters include a saturation voltage of 2.1 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 880 W. The component is housed in a TO-247-3 package with through-hole mounting.

Feature Summary

• Incorporates XPT (Extreme Light Punch Through) technology for optimized performance
• Features Trench gate architecture for low conduction losses
• Provides square Reverse Bias Safe Operating Area (RBSOA)
• Supports short circuit capability for robust operation

Applications

• Power inverters
• Uninterruptible Power Supplies (UPS)
• Motor drives
• Switching Mode Power Supplies (SMPS)
• Welding machines

Procurement Notes

Verify the specific suffix 'C4' against the manufacturer's latest datasheet to confirm pinout compatibility and thermal characteristics. Ensure the ordering documentation explicitly lists the TO-247-3 package style. Cross-reference the part number with official IXYS distribution channels to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component for designs requiring 650V blocking capability with moderate current handling up to 110A. The 2.1V saturation voltage suggests suitability for efficiency-critical applications. Verify that the gate drive circuitry can accommodate the specified ±20V limits. Confirm that the PCB layout supports the thermal requirements associated with the 880W power dissipation rating in the target enclosure.

Part Context

This IGBT is part of IXYS's XPT product line, which focuses on reducing tail current during switching transitions. The TO-247-3 package is an industry-standard form factor for high-current discrete semiconductors. It serves as a replacement for older generation silicon IGBTs in medium-frequency power conversion systems where lower switching losses are required.

Replacement Considerations

Potential substitutes include the IXXH110N65B4H1 and IXXK110N65B4H1 from the same manufacturer family. Verify that any alternative maintains the identical TO-247-3 footprint and compatible electrical thresholds to ensure direct interchangeability without redesigning the gate drive or heatsinking infrastructure.