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The IXXH30N60C3D1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 XPT series. It features a TO-247AD-3 through-hole package and supports a collector-emitter voltage of 600 V. The device provides a continuous collector current of 30 A at 25°C, with a maximum pulsed current of 60 A. Key electrical parameters include a saturation voltage of 2.3 V, gate-emitter leakage current of 100 nA, and power dissipation of 300 W. It operates within a junction temperature range of -55°C to +175°C.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status via the latest ECAD model or supplier documentation. Ensure storage conditions meet moisture sensitivity level requirements before soldering. Cross-reference part numbers to avoid confusion with similar suffixes that may indicate different thermal or electrical characteristics.
Select this component when a 600 V rating and 30 A continuous current are required in a TO-247AD package. Consider the 2.3 V saturation voltage for conduction loss calculations. Evaluate thermal management needs based on the 300 W power dissipation rating. Compare switching speeds with other GenX3 variants if specific timing constraints exist.
This part belongs to the IXYS IXXH30N60 family, which includes various packaging and suffix options. The C3D1 suffix typically denotes specific manufacturing lot or testing variations within the standard IXXH30N60C3 baseline. It shares core electrical characteristics with other members of the XPT GenX3 series but may differ in mechanical or traceability details.
Direct substitutes include IXXH30N60C3. Other compatible options from the same series may offer identical electrical performance. Verify pinout compatibility and thermal pad configuration before substitution. Check for any updates in the GenX3 product line that might supersede this specific suffix.