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Product Detailed Parameters
- Description：IGBT 650V 70A TO-247AD
- Series：XPT™, GenX4™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：146 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 30A
- Power - Max：230 W
- Switching Energy：1.04mJ (on), 730µJ (off)
- Input Type：Standard
- Gate Charge：52 nC
- Td (on/off) @ 25°C：20ns/150ns
- Test Condition：400V, 30A, 15Ohm, 15V
- Reverse Recovery Time (trr)：65 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD (IXXH)
- Grade：-
- Qualification：-
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Overview
The IXXH30N65B4D1 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX4 technologies within the TO-247AD package for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 70 A at 25°C, with a peak pulsed current rating of 146 A. The saturation voltage is specified at 2 V. It operates across a temperature range from -55°C to +175°C junction temperature, with a power dissipation capacity of 230 W.
Feature Summary
- Integrates XPT technology to optimize the trade-off between conduction losses and switching performance.
- Employs GenX4 trench gate architecture to achieve low on-state voltage drop and fast switching characteristics.
- Features a robust TO-247AD leaded package designed for high thermal efficiency in demanding power applications.
Applications
- High-frequency switch-mode power supplies
- Motor drive inverters
- Uninterruptible power supply systems
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number and date code against official IXYS documentation. Confirm that the physical marking on the TO-247AD package matches the specified model identifier. Ensure compliance with relevant environmental directives as indicated in the product specifications before integration into final assemblies.
Selection Notes
Select this component when a 650V rated IGBT with moderate current handling is required. The 70A continuous current rating suits applications where thermal management allows for efficient heat dissipation. Consider the specific saturation voltage and switching energy requirements relative to the system's efficiency targets and operating frequency constraints.
Part Context
This device belongs to the IXYS IXXH series of discrete IGBTs. It shares the TO-247AD form factor with other models in the lineup but differs in current and voltage ratings. The series is characterized by the use of advanced trench gate and field stop technologies to enhance performance over previous generations.
Replacement Considerations
Direct replacements must match the 650V voltage class, TO-247AD package, and similar electrical parameters. Verify pinout compatibility and thermal resistance values. Consult manufacturer substitution guides for equivalent parts with adjusted current or switching speed profiles if exact matches are unavailable.
FAQ
What is the maximum junction temperature for the IXXH30N65B4D1?
The maximum operating junction temperature is +175°C.
Does the IXXH30N65B4D1 have an integrated diode?
No, the IXXH30N65B4D1 is a single IGBT without an integrated anti-parallel diode.
What is the recommended gate-emitter voltage range?
The maximum gate-emitter voltage is specified as -20 V to +20 V.
