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The IXXH40N65B4 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the Trench GenX4 series, housed in a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 625 W. It operates within a temperature range of -55°C to +175°C.
Verify component authenticity against official IXYS documentation before integration. Confirm that the specific ordering suffix matches the required technical specifications, as variations may exist within the product line. Ensure storage conditions comply with moisture sensitivity levels defined in the datasheet to prevent package damage during soldering processes.
Select this component for applications requiring a balance of moderate current handling and low saturation voltage. The TO-247AD-3 package facilitates efficient heat dissipation for medium-power designs. Evaluate thermal resistance requirements against the 625 W dissipation limit to ensure adequate heatsinking for the intended duty cycle and ambient temperature conditions.
This part is part of the IXYS IXXH series, which focuses on high-performance IGBTs for general-purpose switching. It shares the XPT technology platform with other models like the IXXH80N65B4 but offers lower current ratings suitable for less demanding power stages. The series is designed to replace older generation devices with improved switching characteristics.
Direct pin-compatible alternatives within the same family include the IXXH40N65B4H1. Cross-manufacturer replacements require careful verification of Vce(sat), Ic ratings, and package dimensions to ensure mechanical and electrical compatibility without redesigning the PCB layout.