IXXH40N65B4H1

Overview

The IXXH40N65B4H1 is a single N-channel Silicon IGBT from IXYS, utilizing XPT technology and housed in a TO-247-3 package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 40 A at 25°C. The device has a maximum power dissipation of 300 W and an on-state collector-emitter saturation voltage of 1.85 V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• XPT (Extreme Light Punch Through) technology for optimized switching performance
• Trench gate design for low conduction losses
• High short-circuit capability

Applications

• Motor drives
• Switched-mode power supplies
• Inverters

Procurement Notes

Verify the manufacturer date code and lot traceability upon receipt. Confirm that the component matches the specified TO-247-3 physical dimensions and pinout configuration. Ensure storage conditions comply with moisture sensitivity level requirements before soldering.

Selection Notes

Select this component for applications requiring 650V blocking capability with moderate current handling up to 40A. Consider the thermal resistance and required heatsinking to maintain junction temperatures within the specified operating range during high-duty cycle operations.

Part Context

This part belongs to the IXYS IXXH series of XPT IGBTs. It is designed as a robust discrete power switch for medium-power industrial and consumer electronics applications, offering a balance between low conduction loss and fast switching speeds.

Replacement Considerations

Direct replacements include IXXH40N65C3 or IXXH40N65B4. Verify pin compatibility and electrical parameters such as Vce(sat) and switching times when substituting.