IXXH50N60B3

Overview

The IXXH50N60B3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT™ technology and belongs to the GenX3™ series, housed in a TO-247AD package for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 120 A at 25°C. The device features a maximum collector-emitter saturation voltage (VCE(on)) of 1.8 V at 15 V gate drive and 36 A collector current. Power dissipation is rated at 600 W, with an operating temperature range from -55°C to +175°C junction temperature.

Feature Summary

• Incorporates XPT™ (Extra Punch Through) technology to optimize the trade-off between low conduction losses and fast switching performance.
• Features GenX3™ trench gate architecture designed to reduce gate charge and improve switching efficiency compared to previous generations.
• Provides a square Reverse Bias Safe Operating Area (RBSOA) ensuring robust operation under short-circuit conditions.

Applications

• High-frequency power supplies and inverters
• Motor control drives and servo amplifiers
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure the supplier provides valid traceability documents. Confirm RoHS compliance status as per the latest manufacturer declaration. Check for any recent Product Change Notifications (PCN) that may affect specifications or packaging.

Selection Notes

Select this component when a 600V rating and high current capacity are required in a standard through-hole package. Compare VCE(sat) and gate charge values against alternatives to ensure compatibility with existing gate driver capabilities. Verify thermal resistance requirements match the system's heat sink design for reliable operation at 120 A.

Part Context

This part is part of the IXYS IXXH50N60 family, which includes variants like IXXH30N60B3 and IXXH75N60B3D1. These devices share similar XPT™ and GenX3™ technologies but differ in current ratings and package styles. The IXXH50N60B3 specifically targets applications requiring a balance of high current handling and efficient switching in medium-power industrial contexts.

Replacement Considerations

Direct substitutes within the same family include IXXH30N60B3 (lower current) or IXXH75N60B3D1 (higher current). Cross-brand replacements require matching VCEO, Ic, VCE(sat), and package dimensions. Verify gate charge and switching times to ensure driver compatibility.

FAQ

What is the maximum junction temperature for the IXXH50N60B3?

The maximum operating junction temperature (TJ) for the IXXH50N60B3 is +175°C.

Does the IXXH50N60B3 have an integrated anti-parallel diode?

No, the IXXH50N60B3 is a standalone IGBT without an integrated freewheeling diode. An external diode must be used if reverse current blocking or freewheeling is required.

What is the typical gate charge for this device?

The total gate charge (Qg) is typically 70 nC, measured under test conditions of VGE = 15 V and IC = 36 A.