IXXH60N65B4

$5.78

Description：IGBT PT 650V 116A TO-247AD
Series：GenX4™, XPT™

SKU:0ac1baaa166a Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 650V 116A TO-247AD
Series：GenX4™, XPT™
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：116 A
Current - Collector Pulsed (Icm)：250 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 60A
Power - Max：455 W
Switching Energy：3.13mJ (on), 1.15mJ (off)
Input Type：Standard
Gate Charge：95 nC
Td (on/off) @ 25°C：37ns/145ns
Test Condition：400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD (IXXH)
Grade：-
Qualification：-

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IXXH60N65B4

Overview

The IXXH60N65B4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Trench GenX4 technology with XPT (Extra Punch-Through) architecture to optimize switching performance and conduction losses. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 60 A at 25°C, increasing to 145 A under specific thermal conditions. It operates within a junction temperature range of -55°C to +175°C and dissipates up to 536 W of power. Packaged in a TO-247AD-3 through-hole housing, it includes an integrated anti-parallel diode.

Feature Summary

Trench GenX4 technology for reduced switching losses
XPT structure for optimized trade-off between conduction and switching
High short-circuit capability for robust operation
Integrated fast recovery anti-parallel diode

Applications

Motor drives and servo amplifiers
Switched-mode power supplies (SMPS)
Induction heating systems
Uninterruptible power supplies (UPS)

Procurement Notes

Verify the manufacturer part number against official IXYS documentation to ensure authenticity. Confirm that the component matches the specified TO-247AD-3 package and electrical ratings. Request relevant test reports or certificates of conformity if required for quality assurance purposes.

Selection Notes

Select this component for applications requiring high voltage blocking and moderate current handling in a standard through-hole package. Consider the thermal resistance and power dissipation limits when designing heat sinks. Ensure gate drive voltages remain within the specified ±20 V range to prevent damage.

Part Context

This IGBT belongs to the IXYS Trench GenX4 series, which combines trench gate technology with punch-through design. The series targets efficient power conversion in industrial and consumer electronics. The TO-247AD-3 package provides reliable mechanical mounting and thermal management for discrete power modules.