IXXH60N65B4H1

$10.27

Description：IGBT PT 650V 116A TO-247AD
Series：GenX4™, XPT™

SKU:e36ba8db3fa7 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 650V 116A TO-247AD
Series：GenX4™, XPT™
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：116 A
Current - Collector Pulsed (Icm)：230 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 60A
Power - Max：380 W
Switching Energy：3.13mJ (on), 1.15mJ (off)
Input Type：Standard
Gate Charge：95 nC
Td (on/off) @ 25°C：37ns/145ns
Test Condition：400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr)：150 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD (IXXH)
Grade：-
Qualification：-

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IXXH60N65B4H1

Overview

The IXXH60N65B4H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX4 XPT series, manufactured by Littelfuse/IXYS. It utilizes silicon technology and features a TO-247-3 through-hole package. The device supports a collector-emitter breakdown voltage of 650V and a continuous collector current of 60A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.2V, a gate-emitter leakage current of 100nA, and a power dissipation rating of 536W. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Incorporates XPT thin wafer technology for optimized low conduction losses.
Features GenX4 trench architecture supporting high switching frequencies up to 5kHz.
Designed with low gate drive requirements for simplified circuit integration.

Applications

Power inverters
Motor drives
PFC circuits

Procurement Notes

Verify the manufacturer designation as Littelfuse or IXYS on official documentation. Confirm the specific suffix H1 corresponds to the intended pinout and packaging configuration. Ensure RoHS compliance details are reviewed against current regulatory standards before procurement.

Selection Notes

Select this component for applications requiring 650V blocking capability and 60A continuous current handling in a TO-247-3 form factor. Evaluate thermal management requirements based on the 536W power dissipation limit and ensure the operating junction temperature remains within the specified -55°C to +175°C range.

Part Context

This part belongs to the IXYS GenX4 XPT family of silicon IGBTs. These devices are engineered for high power density and efficiency in medium-power switching applications. The series typically includes variants with different current ratings and voltage classes, all sharing similar trench and field-stop technologies.

Replacement Considerations

Publicly listed substitutes include IXYH50N65C3H1 and BKE120N075HS1. Verify compatibility regarding package dimensions, thermal resistance, and electrical characteristics such as VCE(sat) and switching times before substitution.