IXXH75N60C3

Overview

The IXXH75N60C3 is a silicon single IGBT from the IXYS GenX3 Power Device series, utilizing XPT technology. It features a TO-247-3 package designed for through-hole mounting. The device supports a collector-emitter maximum voltage of 600 V and a gate-emitter voltage range of -20 V to 20 V. At 25°C, it provides a continuous collector current of 75 A with a power dissipation capacity of 380 W. The unit weighs 38 g.

Feature Summary

• Incorporates XPT (eXtended Plateau Technology) architecture for optimized switching performance.
• Built on the GenX3 Power Device platform for enhanced reliability in high-power applications.

Applications

• High-frequency induction heating systems
• Switch-mode power supplies
• Motor control drives

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official IXYS documentation. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with RoHS directives as indicated in the product attributes before finalizing procurement orders.

Selection Notes

Select this component when a 600V rated IGBT with moderate current handling is required. The TO-247-3 package facilitates efficient thermal management for through-hole PCB designs. Consider the specific saturation voltage and switching characteristics defined in the datasheet to ensure compatibility with the target circuit topology.

Part Context

This component belongs to the IXYS IXXH75N60 series of insulated gate bipolar transistors. The series utilizes XPT technology to balance low conduction losses with fast switching capabilities. These devices are engineered for robust operation in demanding power electronics environments requiring high efficiency.

Replacement Considerations

Consult official IXYS substitution guides for verified alternatives. Generic equivalents may not replicate the specific XPT characteristics or GenX3 packaging requirements necessary for direct replacement in existing designs.