IXXH80N65B4

Overview

The IXXH80N65B4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Trench and XPT technology to achieve high efficiency in power switching applications. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current rating of 80 A at 25°C. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247AD-3 package.

Feature Summary

• Incorporates Trench gate and XPT (eXtended Plateau) technologies for optimized switching performance and low conduction losses.
• Designed with a soft recovery fast freewheeling diode to minimize switching losses and electromagnetic interference during operation.

Applications

• High-frequency welding inverters
• Switched-mode power supplies (SMPS)
• Motor control drives

Procurement Notes

Verify the specific suffix against the manufacturer's official datasheet, as ordering codes often denote variations in packaging or terminal plating that do not alter electrical function. Confirm RoHS compliance status directly from the component documentation before procurement to ensure adherence to regulatory requirements.

Selection Notes

Select this component for designs requiring robust 650V blocking capability with moderate current handling. Ensure the thermal management system can dissipate up to 625 W of power dissipation. Verify that the gate drive circuitry supports the specified ±20 V limits to prevent device damage.

Part Context

This part belongs to the IXYS Trench IGBT GenX4 series, which integrates advanced trench gate structures with field-stop technology. The series is engineered for high-density power conversion systems, offering improved figure-of-merit compared to previous planar generations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing with other 650V/80A TO-247 IGBTs requires detailed parameter matching beyond the scope of verified data.