IXXH80N65B4D1

Overview

The IXXH80N65B4D1 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS XPT-GenX4 series. It utilizes Trench technology and is housed in a TO-247AD-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 180 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 625 W. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Incorporates XPT (eXtended Plateau Technology) to optimize switching performance and reduce conduction losses.
• Features GenX4 Trench gate architecture for improved ruggedness and lower on-state voltage drop.
• Designed with a robust TO-247AD-3 leaded package suitable for high-power thermal management.

Applications

• Industrial motor drives and inverters
• High-frequency welding equipment
• Uninterruptible power supplies (UPS)
• Switch-mode power supplies

Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm the specific suffix D1 corresponds to the required packaging format. Request a Certificate of Conformance or test report to validate electrical parameters such as VCE(sat) and leakage currents prior to integration into production circuits.

Selection Notes

Select this component when a 650V rated IGBT with high current capacity is required. The 180A continuous current rating makes it suitable for applications demanding significant power handling. Ensure the thermal design accommodates the 625W power dissipation limit. Compare against other GenX4 variants if different current ratings or package styles are needed for the specific system constraints.

Part Context

This part belongs to the IXYS XPT-GenX4 family of 650V IGBTs. It shares the same package and voltage rating with models like IXXH60N65B4H1 but offers higher current capability. The series is characterized by its use of advanced trench gate technology combined with plasma treatment for optimized trade-offs between switching speed and conduction loss.

Replacement Considerations

Direct substitutes within the same series include IXXH80N65B4H1, which shares identical electrical characteristics and pinout. Other compatible options may include IXXH110N65B4 for higher current margins, provided thermal limits are respected. Verify that any replacement maintains the TO-247AD-3 footprint and GenX4 technology profile.