IXXK100N60B3H1

Overview

The IXXK100N60B3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing Extreme Light Punch Through (XPT) technology and GenX3 architecture. It features a maximum collector-emitter voltage (VCES) of 600 V and a continuous collector current (IC90) of 100 A at a case temperature of 90°C. The device has a maximum saturated collector-emitter voltage (VCE(sat)) of 1.80 V at IC = 70 A and VGE = 15 V. It includes an integrated anti-parallel ultra-fast diode with a reverse recovery time (trr) of 140 ns. Available in TO-264 (PLUS247) through-hole packages, it supports a junction temperature range from -55°C to +150°C and is rated for switching frequencies between 10 kHz and 30 kHz.

Feature Summary

• Optimized for high power density with low gate drive requirements
• Features square Reverse-Bias Safe Operating Area (RBSOA)
• Includes avalanche rating capability
• Provides short circuit protection capability
• Integrates an anti-parallel ultra-fast diode

Applications

• Power inverters
• Uninterruptible Power Supplies (UPS)
• Motor drives
• Switching Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits

Procurement Notes

Verify the specific package variant required, as the datasheet covers both TO-264 (IXXK) and PLUS247 (IXXX) configurations. Confirm that the ordering suffix matches the desired physical footprint before finalizing procurement. Ensure thermal management solutions are compatible with the specified mounting torque and force limits to maintain reliable operation within the stated temperature ranges.

Selection Notes

Select this component for applications requiring robust performance in the 10-30 kHz switching range. The XPT technology ensures low conduction losses, making it suitable for high-efficiency designs. Consider the 1.80 V VCE(sat) limit when calculating thermal dissipation at full load. Verify that the gate resistance values used in the design align with the switching energy loss characteristics provided in the datasheet graphs.

Part Context

This part belongs to the IXYS 600V IGBT family featuring XPT and GenX3 technologies. It is designed as a medium-speed, low VCE(sat) PT IGBT intended for general-purpose industrial and commercial power conversion applications. The series offers a balance between conduction efficiency and switching speed, targeting systems where moderate switching frequencies are preferred over ultra-high frequency operation.

Replacement Considerations

Direct replacements include the IXXX100N60B3H1, which shares identical electrical specifications but utilizes the PLUS247 package instead of the standard TO-264. When substituting, verify that the PCB footprint and mounting hardware accommodate the specific terminal configuration of the chosen package variant.