IXXK110N65B4H1

Overview

The IXXK110N65B4H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Trench GenX4 technology with XPT (Extended Plate Technology) to optimize switching performance and conduction losses. The device features a collector-emitter voltage rating of 650 V and a continuous collector current of 110 A at 25°C. It operates within a temperature range of -55°C to +175°C, housed in a TO-247-3 through-hole package.

Feature Summary

• Trench GenX4 technology for optimized switching characteristics
• XPT structure for improved short-circuit ruggedness
• High thermal stability up to 175°C junction temperature

Applications

• Induction heating systems
• Switched-mode power supplies
• Motor control inverters

Procurement Notes

Verify the specific suffix H1 against official IXYS documentation to confirm pinout and thermal interface specifications. Ensure compatibility with existing PCB footprints for the TO-247-3 package before integration into high-power designs.

Selection Notes

Select this component for applications requiring robust short-circuit capability and low conduction losses at 650V. Compare saturation voltage and switching energy parameters against similar IXXH or IXXQ series devices to determine suitability for specific frequency and thermal constraints.

Part Context

This part belongs to the IXYS IXXK series of Trench IGBTs. It shares the same voltage class and packaging as other members like the IXXH80N65B4H1 but offers higher current handling capabilities due to its specific die configuration and XPT technology implementation.

Replacement Considerations

Direct replacements may include the IXXH110N65B4H1 if available, though electrical characteristics such as saturation voltage and switching times should be verified. Cross-reference with other IXYS 650V Trench IGBTs in the TO-247-3 package for functional equivalence.