IXXK160N65C4

Overview

The IXYS IXXK160N65C4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the XPT™ GenX3™ family, designed for high-power applications. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 290 A at 25°C. The device utilizes Planar Technology with a fast recovery anti-parallel diode, offering low on-state voltage and high short-circuit capability. Packaged in a TO-264 (IXXK) through-hole housing, it supports efficient thermal management for industrial power systems.

Feature Summary

• Integrates XPT™ technology for optimized trade-off between conduction losses and switching performance
• Features a fast-recovery anti-parallel diode with soft recovery characteristics to minimize electromagnetic interference
• Provides robust short-circuit withstand capability for enhanced system reliability under fault conditions

Applications

• Industrial motor drives and inverters
• Uninterruptible power supplies (UPS)
• High-frequency induction heating systems
• Medium-voltage AC and DC drive applications

Procurement Notes

Verify the specific ordering suffix and tape/reel or tube packaging configuration against the manufacturer's latest datasheet before procurement. Confirm that the component meets RoHS compliance requirements for your target market. Ensure that the thermal interface material and mounting torque specifications align with the TO-264 package guidelines to maintain electrical isolation and thermal performance standards.

Selection Notes

Select this component for applications requiring high current handling and low conduction losses in the 650V range. Consider the integrated diode's reverse recovery charge when designing snubber circuits or selecting gate drivers. Evaluate the thermal resistance parameters relative to the expected ambient temperature and heat sink capacity to ensure junction temperatures remain within safe operating limits during peak load conditions.

Part Context

This part belongs to IXYS's XPT™ GenX3™ series, which represents an advancement in planar IGBT technology. The series is engineered to reduce switching losses while maintaining low on-state voltage, making it suitable for modern power electronics where efficiency and compactness are critical. It complements other discrete power devices in IXYS's portfolio for complete power stage solutions.

Replacement Considerations

Direct pin-to-pin replacements may include other 650V/290A IGBTs in TO-264 packages from IXYS or equivalent manufacturers. Verify that substitute parts match the specific Vce(sat), Qg, and trr characteristics to avoid gate driver incompatibility or thermal issues. Cross-reference the mechanical dimensions and terminal layout to ensure proper PCB or busbar integration.