IXXN100N60B3H1

Overview

The IXXN100N60B3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 and XPT series. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 100 A at 25°C. The device utilizes Extreme Light Punch Through technology to optimize switching performance. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.8 V at 70 A, a gate charge of 143 nC, and a power dissipation rating of 695 W. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-264-3 through-hole package.

Feature Summary

• Integrates GenX3 trench gate architecture with XPT technology for reduced switching losses.
• Optimized for high-frequency operation in the 10–30 kHz range.
• Features soft recovery characteristics in the integrated anti-parallel diode.

Applications

• High-efficiency motor drives
• Switch-mode power supplies
• Induction heating systems

Procurement Notes

Verify the specific suffix H1 against the manufacturer's latest datasheet to confirm pinout and thermal characteristics. Confirm RoHS compliance status as manufacturing processes may evolve. Check for obsolescence notices or lifecycle changes directly from IXYS before finalizing procurement plans.

Selection Notes

Select this component for applications requiring low conduction loss and fast switching speeds at 600 V. Ensure the thermal management design supports the 695 W power dissipation limit. Compare total system losses against alternative IGBTs by evaluating both saturation voltage and switching energy values under identical operating conditions.

Part Context

This part belongs to the IXXN100N60B3 family, distinguished by the H1 suffix indicating specific packaging or testing variations. It is part of the broader HiPerFET/GenX3 portfolio designed for industrial power conversion. The device represents an evolution in silicon planar technology aimed at improving efficiency in medium-power applications.

Replacement Considerations

Direct substitutes include IXXK100N60B3H1 and IXXR100N60B3H1. Verify pin compatibility and thermal resistance values when cross-referencing these alternatives. Ensure that any replacement maintains the required 600 V rating and 100 A current capacity for the target circuit.