IXXN200N60C3H1

Overview

The IXXN200N60C3H1 is a single-chip Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It utilizes XPT technology to achieve a collector-emitter breakdown voltage of 600 V and a continuous collector current of 200 A at 25°C. The device features a saturated collector-emitter voltage of 1.6 V and a maximum gate-emitter voltage of ±20 V. Packaged in a SOT-227B-4 housing, it supports screw mounting and operates within a temperature range of -55°C to +150°C.

Feature Summary

• XPT technology for optimized switching performance
• Single configuration in robust SOT-227B-4 package
• High thermal stability up to 150°C junction temperature

Applications

• Industrial motor drives
• Uninterruptible power supplies
• Inverter circuits

Procurement Notes

Verify the specific suffix H1 against official datasheets to confirm pinout and terminal configuration. Ensure the supplier provides valid traceability documentation. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before finalizing orders.

Selection Notes

Select this component for applications requiring high current handling in a compact module form factor. The 600V rating suits medium-voltage systems. Evaluate thermal management requirements based on the 1.6V saturation voltage and expected load currents to ensure reliable operation within the specified temperature limits.

Part Context

This part belongs to the IXYS IXXN series of XPT IGBT modules. It shares the core XPT technology family but differs in packaging and electrical ratings from other variants like the IXXK or IXXH series. The SOT-227B-4 package distinguishes it from TO-247 discrete packages.

Replacement Considerations

Direct substitutes include other IXYS IXXN series modules with identical pinouts and ratings. Verify compatibility with existing heatsink interfaces when replacing similar models from different manufacturers.