IXXN200N65A4

Overview

The IXYS IXXN200N65A4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing GenX4™ and XPT™ technologies. It features a 650V collector-emitter breakdown voltage and a continuous collector current of 200A at 25°C, with a maximum pulsed current of 1200A. The device exhibits a typical saturation voltage of 1.8V at VGE=15V and IC=200A. Packaged in a SOT-227B (Minibloc) chassis mount configuration, it supports a junction temperature range from -55°C to +175°C.

Feature Summary

• Integrates IXYS GenX4™ Trench technology for optimized switching performance
• Utilizes XPT™ substrate engineering to enhance blocking capability and ruggedness
• Designed for high-power industrial applications requiring robust thermal management

Applications

• Industrial motor drives and inverters
• High-frequency power supplies
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific ordering suffix and package variant against the official IXYS datasheet to ensure compatibility with your thermal design requirements. Confirm that the SOT-227B mounting interface matches your heatsink specifications. Cross-reference the electrical parameters, particularly VCE(sat) and switching energies, with your system's operational limits before finalizing procurement.

Selection Notes

Select this component for applications demanding high current handling and efficient thermal dissipation via direct chassis mounting. The SOT-227B package facilitates low thermal resistance paths suitable for high-power density designs. Ensure gate drive circuits support the specified VGE limits and consider the switching energy values for snubber circuit design to manage voltage spikes during operation.

Part Context

This IGBT belongs to IXYS's discrete power semiconductor portfolio, specifically the GenX4™ family known for advanced trench gate structures. The XPT™ technology extends the depletion layer to improve avalanche ruggedness and short-circuit withstand capability. This part represents a standard solution for medium-to-high power conversion tasks within the broader IXYS IGBT lineup.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. When evaluating alternatives, verify that candidate devices match the 650V rating, 200A continuous current, and SOT-227B mechanical footprint. Electrical characteristics such as VCE(sat) and switching times must be compared directly to ensure functional equivalence.