IXXP12N65B4D1

$1.63

Description：IGBT 650V 38A TO-220-3
Series：XPT™, GenX4™

SKU:240e41bb4d0d Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 650V 38A TO-220-3
Series：XPT™, GenX4™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：38 A
Current - Collector Pulsed (Icm)：70 A
Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 12A
Power - Max：160 W
Switching Energy：440µJ (on), 220µJ (off)
Input Type：Standard
Gate Charge：34 nC
Td (on/off) @ 25°C：13ns/158ns
Test Condition：400V, 12A, 20Ohm, 15V
Reverse Recovery Time (trr)：43 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

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IXXP12N65B4D1

Overview

The IXXP12N65B4D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from IXYS, utilizing GenX4™ Trench and XPT™ technologies. It features a collector-emitter voltage of 650V and a continuous collector current of 38A in through-hole TO-220-3 packaging. The device includes an integrated anti-parallel fast recovery diode with a reverse recovery time of 150ns. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.2V at 38A and a gate threshold voltage ranging from 3V to 5V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Integrates an anti-parallel fast recovery diode for simplified circuit design
Utilizes GenX4™ Trench and XPT™ technologies for optimized switching performance
Provides high short-circuit withstand capability for robust system protection

Applications

Induction heating systems
Switched-mode power supplies (SMPS)
Motor control applications

Procurement Notes

Verify the specific suffix D1 confirms the inclusion of the integrated anti-parallel diode, as standard variants may lack this feature. Ensure the TO-220-3 package matches thermal management requirements. Confirm RoHS compliance status with the supplier. Check lead times due to potential supply chain variability for discrete semiconductors. Validate that the 650V rating aligns with the target application's voltage stress margins.

Selection Notes

Select this component when a compact solution requiring an integrated freewheeling diode is necessary. The 650V rating suits medium-voltage industrial applications. Consider the 38A continuous current limit for load requirements. The TO-220-3 package offers a balance of thermal performance and board space. Evaluate switching frequency needs against the 150ns diode recovery time.

Part Context

This IGBT belongs to IXYS's GenX4™ family, which combines Trench gate technology with XPT™ (Extreme Light Punch Through) for improved efficiency. The series targets high-performance power conversion. The D1 suffix specifically denotes the variant with an integrated diode, differentiating it from single IGBT devices in the same voltage and current class.