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Product Detailed Parameters
- Description：IGBT 600V 33A TO-3P
- Series：XPT™, GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：33 A
- Current - Collector Pulsed (Icm)：140 A
- Vce(on) (Max) @ Vge, Ic：1.85V @ 15V, 24A
- Power - Max：90 W
- Switching Energy：550µJ (on), 800µJ (off)
- Input Type：Standard
- Gate Charge：39 nC
- Td (on/off) @ 25°C：23ns/150ns
- Test Condition：400V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr)：36 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The IXXQ30N60B3M is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in a TO-220FP-3 through-hole package. The device features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 33 A at 25°C, with a maximum rating of 140 A. The collector-emitter saturation voltage is specified at 1.66 V. It operates within a temperature range of -55°C to +175°C and has a power dissipation capacity of 90 W.
Feature Summary
- Single configuration for discrete switching applications
- Silicon-based semiconductor construction
- Through-hole mounting capability
Applications
- General purpose power switching circuits
- Industrial motor control systems
- Power supply inverters
Procurement Notes
Verify the specific manufacturer part number against official IXYS documentation to ensure authenticity. Confirm that the component matches the required TO-220FP-3 package style and electrical ratings before integration into designs. Check for any product change notifications or lifecycle status updates from the manufacturer to ensure long-term availability and compliance with project requirements.
Selection Notes
Select this component when a 600 V rated IGBT with moderate current handling is required in a through-hole format. Ensure the thermal management design supports the 90 W power dissipation limit. Verify that the gate drive voltage limits of +/- 20 V are compatible with the system controller. Consider the operating temperature range up to 175°C for high-temperature environments.
Part Context
This component belongs to the IXYS IXXQ series of IGBTs. It is designed for general-purpose power electronics applications requiring reliable switching performance. The TO-220FP-3 package provides a balance between current capacity and board space efficiency compared to larger industrial packages.
Replacement Considerations
Direct substitutes should match the 600 V VCEO, 33 A Ic rating, and TO-220FP-3 package. Verify pinout compatibility and saturation voltage characteristics. Cross-reference with other IXYS IXXQ variants or equivalent offerings from other manufacturers ensuring identical electrical specifications.
