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Product Detailed Parameters
- Description：IGBT PT 600V 200A PLUS247
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：440 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 70A
- Power - Max：695 W
- Switching Energy：1.9mJ (on), 2mJ (off)
- Input Type：Standard
- Gate Charge：143 nC
- Td (on/off) @ 25°C：30ns/120ns
- Test Condition：360V, 70A, 2Ohm, 15V
- Reverse Recovery Time (trr)：140 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXXX100N60B3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and belongs to the XPT and GenX3 product series. The device features a TO-247-3 package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 100 A at 25°C. The typical collector-emitter saturation voltage (Vce(on)) is 1.8 V under test conditions of 15 V gate drive and 70 A collector current.
Feature Summary
- Incorporates XPT (eXtended Plate Technology) for optimized trade-off between conduction losses and switching performance.
- Utilizes GenX3 trench gate technology to achieve low gate charge and reduced switching energy losses.
- Designed with a robust construction suitable for high-power industrial applications requiring reliable thermal management.
Applications
- Industrial motor drives and inverters
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the complete part number including the H1 suffix against official IXYS documentation to ensure correct revision status. Confirm RoHS compliance details via the manufacturer's latest environmental declaration. Cross-reference the datasheet version to validate specific electrical parameters before integration into design specifications.
Selection Notes
Select this component for applications requiring 600 V blocking capability with moderate current handling up to 100 A. Ensure the thermal design accommodates the power dissipation characteristics defined in the datasheet. Verify that the gate drive circuitry supports the required voltage levels for optimal saturation and switching performance within the specified temperature range.
Part Context
This device is part of IXYS' portfolio of high-performance IGBTs leveraging advanced trench gate and field stop technologies. The TO-247-3 package provides a balance between electrical performance and mechanical robustness, facilitating efficient heat transfer to heatsinks in standard industrial mounting configurations.
Replacement Considerations
Consult official IXYS substitution guides for verified alternatives. Generic cross-references may not match the specific XPT and GenX3 technology characteristics or pinout configurations.
