IXXX100N60C3H1

Overview

The IXXX100N60C3H1 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX3 technologies to achieve optimized switching performance. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 100 A at 25°C. It is housed in a TO-247-3 package designed for through-hole mounting. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter leakage current of 200 nA, and a power dissipation rating of 695 W. The component operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

• Integrates XPT technology for reduced tail current and improved switching efficiency.
• Incorporates GenX3 trench gate architecture for low on-state voltage drop.
• Designed for high reliability with robust short-circuit capability.

Applications

• High-frequency motor drives
• Uninterruptible power supplies (UPS)
• Induction heating systems

Procurement Notes

Verify the specific suffix H1 against official IXYS documentation to confirm pinout configuration and thermal characteristics. Ensure the ordering part number matches the exact datasheet revision required for your design. Cross-reference the manufacturer's latest product change notifications to identify any recent updates to the component specifications or manufacturing location before finalizing procurement.

Selection Notes

Select this component when a 600V blocking capability and 100A continuous current are required in a standard TO-247 footprint. Consider the 1.8V saturation voltage for conduction loss calculations and the 695W power dissipation limit for heatsink sizing. Verify that the switching speed characteristics align with the target application frequency and electromagnetic interference constraints.

Part Context

This IGBT belongs to the IXYS IXXX series, which combines XPT buffer layer technology with GenX3 trench gate structures. This combination targets applications requiring low conduction losses and fast switching speeds. The series is engineered for industrial power conversion where efficiency and thermal management are critical design factors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult the official IXYS replacement guide or contact the manufacturer directly for validated cross-reference information regarding equivalent devices.