IXXX110N65B4H1

Overview

The IXXX110N65B4H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Trench GenX4 technology with XPT (eXtended Plateau) thin wafer processing to optimize the trade-off between conduction and switching losses. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 110 A at 25°C, with a peak pulsed current capability of 250 A. The saturation voltage is specified at 2.1 V. It operates within a junction temperature range of -55°C to +175°C and dissipates up to 880 W of power. The component is housed in a TO-247-3 through-hole package.

Feature Summary

• Integrates fourth-generation Trench gate technology for enhanced switching performance and reduced drive requirements.
• Employs XPT thin wafer technology to achieve low saturation voltage while maintaining robust short-circuit withstand capability.
• Designed for high thermal stability with an extended operating junction temperature range up to 175°C.

Applications

• High-frequency power inverters and motor drives
• Uninterruptible Power Supply (UPS) systems
• Battery charging circuits and power factor correction (PFC)
• Welding machines and lighting ballasts

Procurement Notes

Verify the specific ordering suffix H1 against the manufacturer's latest datasheet to confirm pinout compatibility and internal diode characteristics. Ensure that the TO-247-3 package dimensions match the target PCB footprint. Confirm RoHS compliance status directly with the supplier documentation prior to finalizing procurement orders.

Selection Notes

Select this component when a 650V rating is required with moderate current handling around 110A. The Trench GenX4 architecture offers lower switching losses compared to previous generations, making it suitable for applications operating at higher frequencies. Evaluate thermal management requirements based on the 880W power dissipation limit and ensure adequate heatsinking for the TO-247-3 package.

Part Context

This part belongs to the IXYS IXX series of discrete IGBTs, specifically leveraging the GenX4 platform. It serves as a high-performance switching element within the broader IXYS portfolio of power semiconductors designed for industrial and automotive applications. The numbering convention indicates its voltage class and current rating within the product family.

Replacement Considerations

Direct replacements must match the 650V/110A specification and TO-247-3 package. Verify equivalent switching times and saturation voltages from competitor datasheets such as Infineon or STMicroelectronics to ensure circuit compatibility without redesign.