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The IXYA20N120C4HV-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, now part of Littelfuse. It utilizes XPT thin-wafer technology and belongs to the fourth-generation Trench IGBT family. The device features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 20 A at 25°C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical collector-emitter saturation voltage of 2.1 V, and a power dissipation capacity of 375 W. It operates within a temperature range of -55°C to +175°C and is supplied in a TO-263HV-3 surface-mount package on a reel.
Verify the manufacturer designation carefully, as IXYS products are often listed under Littelfuse following corporate acquisition. Confirm the specific suffix 'HV' and '-TRL' indicates the correct high-voltage variant and tape-and-reel packaging format required for automated assembly processes before finalizing orders.
Select this component when a 1200V rating and approximately 20A continuous current capability are required in a compact SMD form factor. Compare the 2.1V saturation voltage against alternative packages like TO-247 if higher thermal performance or current handling is needed. Ensure the driver circuit supports the specified ±20V gate-emitter voltage limits.
This device is part of the IXYA series, which represents IXYS's fourth-generation trench IGBTs utilizing XPT technology. This generation focuses on reducing saturation voltage to improve efficiency in medium-power applications. The series typically includes variants in both through-hole and surface-mount packages to accommodate different thermal management strategies.
Direct substitutes may include other 1200V, 20A IGBTs in the TO-263HV-3 package from IXYS/Littelfuse, such as the IXYA20N120B4HV-TRL. Verify pinout compatibility and thermal resistance specifications when cross-referencing with competitors. No official substitute list is provided in the source data.