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The IXYA20N65C3-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in a TO-263AA-3 surface-mount package. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 20 A at 25°C, with a peak pulsed current rating of 50 A. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V and a maximum power dissipation of 230 W. The gate-emitter voltage range is specified from -20 V to +20 V. It operates within a junction temperature range of -55°C to +175°C.
Verify the specific suffix TRL against official datasheets to confirm reel packaging specifications. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure the component matches the required TO-263AA-3 footprint for PCB layout compatibility.
Select this component when a surface-mount IGBT with 650V blocking capability is required. Compare the 2.5V saturation voltage against alternative packages to evaluate conduction losses. Verify that the 230W power dissipation rating aligns with the thermal management design of the target application.
This part belongs to the IXYS IXYA series of XPT-class IGBTs. The standard version is available in tube packaging, while the -TRL suffix indicates tape-and-reel delivery. It shares core electrical characteristics with other variants in the 650V XPT family but differs in physical packaging and handling format.
Direct substitutes include the non-trailing version IXYA20N65C3 if reel packaging is not mandatory. Other IXYS 650V TO-263 IGBTs may serve as functional replacements if pinout and thermal resistance parameters are verified.