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Product Detailed Parameters
- Description：IGBT DISCRETE TO-263HV
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IXYA30N120A3HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and Trench gate architecture, housed in a TO-263HV-3 surface-mount package. The device features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 106 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 500 W. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- Incorporates XPT (Extra-Precision Technology) for optimized trade-off between conduction and switching losses.
- Utilizes Trench gate technology to achieve low on-state voltage drop and improved switching performance.
- Designed with a robust square Reverse Bias Safe Operating Area (RBSOA).
Applications
- High-frequency induction heating systems
- Switched-mode power supplies (SMPS)
- Motor control applications
Procurement Notes
Verify the specific suffix against official datasheets, as variations such as 'A4' or 'B4' may exist within the same voltage and current class. Confirm RoHS compliance status through the manufacturer's documentation. Ensure the TO-263HV-3 package footprint matches the design requirements before ordering.
Selection Notes
Select this component for designs requiring high voltage blocking capability with moderate current handling in a compact surface-mount form factor. Compare the 1.9 V saturation voltage against alternative packages like TO-247 if higher thermal dissipation is needed. Evaluate the 500 W power rating against the expected thermal management capabilities of the heat sink.
Part Context
This part belongs to the IXYS IXYA series of high-voltage IGBTs. It shares the 1200V/30A class characteristics with other models in the lineup but is distinguished by its specific HV packaging and XPT technology integration. It serves as a solid-state switching solution for medium-power electronic converters.
Replacement Considerations
Direct substitutes may include other IXYS IGBTs in the 1200V/30A range with similar TO-263HV-3 packaging, such as the IXYA30N120B4HV. Verify pinout compatibility and thermal resistance values when cross-referencing with competitors' offerings.
