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Product Detailed Parameters
- Description：IGBT PT 650V 130A TO-263AA
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：130 A
- Current - Collector Pulsed (Icm)：250 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 36A
- Power - Max：600 W
- Switching Energy：1.3mJ (on), 370µJ (off)
- Input Type：Standard
- Gate Charge：80 nC
- Td (on/off) @ 25°C：22ns/80ns
- Test Condition：400V, 36A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
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Overview
The IXYA50N65C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the C3-Class series, housed in a TO-263-2 (D2PAK-2) surface-mount package. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 130 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 600 W. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- Incorporates IXYS XPT (Extra Punch Through) technology for optimized trade-off between conduction losses and switching performance.
- Designed as a C3-Class component, ensuring high reliability and robustness for industrial power applications.
- Utilizes a TO-263-2 lead frame construction to facilitate efficient thermal management in surface-mount configurations.
Applications
- High-frequency switch-mode power supplies
- Industrial motor drive inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the specific ordering suffix and manufacturing date code upon purchase to ensure compliance with current RoHS and REACH standards. Confirm that the supplier provides original manufacturer documentation or traceability records. Check for any specific handling requirements related to the surface-mount package during storage and assembly processes.
Selection Notes
Select this component when a high-current capability of 130 A is required in a compact surface-mount form factor. Ensure the application circuit can accommodate the 650 V blocking voltage and that the thermal design supports the 600 W power dissipation rating. Verify that the gate drive voltage aligns with the specified ±20 V limits for safe operation.
Part Context
This part belongs to the IXYS IXYA50N65 series, which features XPT technology for improved efficiency. The C3 designation indicates a specific generation of reliability testing and quality assurance protocols defined by the manufacturer for industrial-grade semiconductor devices.
Replacement Considerations
Direct replacements must match the 650V/130A rating and TO-263-2 package. Potential alternatives within the IXYS portfolio include other C3-class IGBTs with similar current and voltage specifications, provided pinout compatibility is verified.
