ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 900V 20A TO-263AA
- Series：GenX3™, XPT™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：900 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：48 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 8A
- Power - Max：125 W
- Switching Energy：460µJ (on), 180µJ (off)
- Input Type：Standard
- Gate Charge：13.3 nC
- Td (on/off) @ 25°C：16ns/40ns
- Test Condition：450V, 8A, 30Ohm, 15V
- Reverse Recovery Time (trr)：114 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
Download product information
Overview
The IXYA8N90C3D1 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) from the IXYS GenX3 series, utilizing XPT technology. It features a collector-emitter voltage rating of 900V and a continuous collector current of 20A at 25°C, dropping to 8A at 110°C case temperature. The device has a maximum saturated collector-emitter voltage of 3.0V at 8A and 15V gate drive. It includes an integrated anti-parallel ultra-fast recovery diode with a forward voltage of 3.0V. Designed for switching frequencies between 20kHz and 50kHz, it operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Optimized for low switching losses in high-frequency applications
- Features a square Reverse-Bias Safe Operating Area (RBSOA)
- Includes an integrated anti-parallel ultra-fast recovery diode
- Positive thermal coefficient of Vce(sat) for stable parallel operation
Applications
- High frequency power inverters
- Uninterruptible Power Supplies (UPS)
- Motor drives
- Switched Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
Procurement Notes
Verify component authenticity through authorized Littelfuse or IXYS distributors. Confirm datasheet revision DS100400C(12/14) matches procurement requirements. Ensure packaging integrity for TO-263 AA packages. Check RoHS compliance status as specified in official documentation before finalizing orders.
Selection Notes
Select this component for designs requiring 900V blocking capability with moderate current handling up to 20A. Consider the 3.0V saturation voltage for conduction loss calculations. Evaluate thermal management needs based on the 125W power dissipation rating at 25°C case temperature. Verify gate drive compatibility with the specified 15V operating level.
Part Context
This part belongs to the IXYS GenX3 family of IGBTs, which are designed for medium-power applications. The 'A' suffix indicates the TO-263 AA (TO-263-3) surface-mount package variant. It shares core electrical characteristics with the through-hole IXYP8N90C3D1 model, differing primarily in physical mounting style and thermal resistance parameters.
Replacement Considerations
Direct pin-compatible replacements include the IXYP8N90C3D1 for through-hole implementations. Cross-vendor equivalents must be verified against the 900V VCES, 8A IC110, and 3.0V VCE(sat) specifications to ensure functional parity in existing circuit layouts.
