IXYB82N120C3H1

Overview

The IXYS IXYB82N120C3H1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) utilizing XPT technology and housed in a TO-264-3 (PLUS264) through-hole package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 164 A at 25°C, with a pulse current rating of 320 A. The device exhibits a typical saturation voltage of 3.2 V at 82 A and 15 V gate drive. Key switching parameters include a turn-on time of 29 ns, turn-off time of 192 ns, and reverse recovery time of 420 ns. Maximum power dissipation is rated at 1040 W, with an operating junction temperature range from -55°C to +150°C.

Feature Summary

• Incorporates XPT (Extra-Precision Technology) for optimized trade-offs between conduction losses and switching performance.
• Features GenX3™ gate technology designed to reduce gate charge and improve switching speed characteristics.
• Utilizes PLUS264™ packaging to provide robust thermal management capabilities for high-power applications.

Applications

• Industrial motor drives and variable frequency drives
• Uninterruptible power supply (UPS) systems
• High-frequency power supplies and inverters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct configuration. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Check for any recent product change notices regarding packaging or material specifications that may affect assembly processes.

Selection Notes

Select this component when a 1200V rating and approximately 164A continuous current capability are required in a TO-264 form factor. Evaluate the 3.2V saturation voltage against thermal constraints and compare switching energies with alternative devices if lower loss is critical. Ensure the gate drive circuit supports the specified 15V test conditions for optimal performance.

Part Context

This part belongs to the IXYS IXYB82N120 series, which utilizes XPT and GenX3 technologies. It serves as a high-performance discrete IGBT solution within the IXYS portfolio, targeting applications requiring efficient power conversion in medium to high-power industrial environments.

Replacement Considerations

Direct substitutes require matching 1200V/164A ratings and TO-264 packages. Verify pinout compatibility and thermal resistance values before substitution.