IXYF30N450

Overview

The IXYS IXYF30N450 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Silicon technology and XPT™ architecture. It features a collector-emitter breakdown voltage of 4.5 kV and a continuous collector current of 23 A at 25°C. The device exhibits a collector-emitter saturation voltage of 3.9 V and supports a power dissipation of 230 W. Designed for through-hole mounting in the I4PAK package, it operates within a temperature range of -55°C to +150°C, with maximum gate-emitter voltages of ±20 V.

Feature Summary

• XPT™ technology enables high blocking voltage capability up to 4.5 kV.

Applications

• High-voltage industrial power supplies
• Motor drive systems
• Inverter circuits

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number IXYF30N450 with official IXYS documentation. Confirm that the I4PAK package matches design requirements. Ensure compliance with RoHS directives as specified in the datasheet before finalizing procurement specifications.

Selection Notes

Select this component when applications require high-voltage switching capabilities exceeding standard levels. The 4.5 kV rating suits demanding environments. Evaluate thermal management needs against the 230 W dissipation limit. Verify that the through-hole I4PAK form factor aligns with the target PCB layout constraints.

Part Context

This IGBT belongs to the IXYS High Voltage series, specifically designed for robust performance in elevated voltage scenarios. The XPT trademark indicates optimized drift layer engineering for superior blocking characteristics compared to conventional structures.

Replacement Considerations

Consult official IXYS substitution guides for verified alternatives. Cross-reference electrical parameters such as the 4.5 kV rating and 23 A current capacity to ensure functional equivalence without compromising system safety margins.