SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXYH100N65C3 is a silicon single IGBT from IXYS, housed in a TO-247-3 package. It features XPT technology and C3-Class optimization for switching frequencies between 20kHz and 60kHz. Key electrical parameters include a collector-emitter voltage of 650V, a continuous collector current of 170A at 25°C, and a maximum pulsed collector current of 200A. The device exhibits a collector-emitter saturation voltage of 1.8V to 2.3V, with power dissipation rated at 750W to 830W. Operating temperatures range from -55°C to +175°C.
Verify the specific datasheet revision and exact saturation voltage rating (1.8V vs 2.3V) upon procurement, as values may vary slightly by manufacturing lot or specific sub-version. Confirm that the TO-247-3 pinout matches the target PCB footprint design. Ensure thermal management solutions are adequate for the specified power dissipation limits under actual operating conditions.
Select this component when designing circuits requiring efficient switching at frequencies above standard 20kHz thresholds. The C3-class designation indicates enhanced performance compared to baseline models. Consider the 650V blocking capability and 170A continuous current rating against peak load requirements. The TO-247-3 package facilitates effective heat sinking for high-power density designs.
This part belongs to IXYS's C3-Class IGBT portfolio, which integrates advanced trench gate and field stop technologies. It complements other high-voltage devices like the IXYH40N65C3 and IXYH75N65C3, offering higher current capacity in similar packages. The series targets modern power electronics demanding reduced system size and improved efficiency.
Direct substitutes include the IXYH75N65C3 for lower current requirements. For equivalent performance in different packages, consider the IXYA50N65C3 (TO-263) if surface mount is required, though current ratings differ. Verify pin compatibility before swapping.