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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 230A TO-247
- Series：Gen5 XPT™
- Mfr：IXYS
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：230 A
- Current - Collector Pulsed (Icm)：560 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 75A
- Power - Max：750 W
- Switching Energy：560µJ (on), 780µJ (off)
- Input Type：Standard
- Gate Charge：313 nC
- Td (on/off) @ 25°C：40ns/255ns
- Test Condition：300V, 50A, 2Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 (IXYH)
- Grade：-
- Qualification：-
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Overview
The IXYH100N65C5 is a Gen5 XPT™ IGBT rated for 650 V collector-emitter voltage and 100 A continuous collector current at 110°C. It utilizes Extreme Light Punch Through technology with a Trench IGBT process to achieve low thermal resistance (0.18 °C/W junction-to-case) and reduced switching losses. The device features a typical turn-off fall time of 24 ns and a saturation voltage of 1.68 V at 75 A. Designed for high-frequency operation between 20 kHz and 60 kHz, it offers high surge current capability up to 560 A and operates within a junction temperature range of -55°C to 175°C.
Feature Summary
- Optimized for high-frequency switching applications in the 20–60 kHz range
- Features square Reverse Biased Safe Operating Area (RBSOA)
- Provides high surge current capability for robust transient handling
Applications
- Power Inverters
- Uninterruptible Power Supplies (UPS)
- Motor Drives
- Switch Mode Power Supplies (SMPS)
- Welding Machines
Procurement Notes
Verify component authenticity by checking the manufacturer's marking on the TO-247-3L package against official Littelfuse specifications. Ensure the datasheet revision matches the batch documentation. Confirm that the ordering suffix aligns with the required packaging configuration before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring efficient performance at switching frequencies above 20 kHz. The low thermal resistance supports high power density designs. Verify that the gate drive circuitry can handle the specified total gate charge of 313 nC to ensure optimal switching transitions and minimize dynamic losses.
Part Context
This device belongs to the IXYS Gen5 XPT™ family of Insulated Gate Bipolar Transistors. It represents an evolution in thin-wafer technology designed to lower internal resistance and improve switching speed compared to previous generations. The product line targets industrial power conversion systems demanding high reliability and compact form factors.
Replacement Considerations
Consult official Littelfuse cross-reference documentation for verified equivalent part numbers. Do not substitute based solely on matching voltage or current ratings without confirming pinout compatibility and thermal characteristics.
