SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXYS IXYH16N250CV1HV is a single high-voltage Insulated Gate Bipolar Transistor (IGBT) utilizing XPT technology. It features a collector-emitter voltage rating of 2500 V and a continuous collector current of 35 A at 25°C. The device is housed in a TO-247 package with a maximum power dissipation of 500 W. It operates within a temperature range of -55°C to +175°C, offering robust performance for demanding power electronics applications.
Verify the specific suffix 'HV' against official datasheets to confirm compatibility with high-voltage design requirements. Ensure thermal management solutions align with the 500 W power dissipation limit. Confirm that the TO-247 package dimensions match the target PCB layout constraints prior to finalizing procurement orders.
Select this component when a 2500 V blocking capability is required alongside moderate current handling. The XPT technology provides advantages in conduction losses compared to standard designs. Consider the TO-247 package for through-hole mounting needs where high thermal conductivity is essential for the application's thermal budget.
This part belongs to IXYS's high-voltage discrete IGBT portfolio. It represents a specialized solution for applications requiring superior voltage withstand capabilities. The product line focuses on delivering efficiency and reliability in critical power conversion stages.
Cross-reference with other 2500 V IGBTs in the TO-247 package from IXYS or other manufacturers. Verify pinout compatibility and electrical parameters before substitution.