IXYH20N120C4

$3.51

Description：IGBT DISCRETE TO-247
Series：-

SKU:f8c45b5cb5e2 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT DISCRETE TO-247
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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IXYH20N120C4

Overview

The IXYH20N120C4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT thin-wafer technology and belongs to the GenX4 generation of trench IGBTs. The device features a TO-247-3 package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage of 1200 V, a continuous collector current of 20 A at 25°C, and a peak pulsed collector current of 80 A. The typical collector-emitter saturation voltage is 2.4 V. Power dissipation is rated at 136 W under standard conditions, with an operating temperature range spanning from -55°C to +175°C.

Feature Summary

Incorporates XPT thin-wafer technology to optimize trade-offs between conduction losses and switching performance.
Features GenX4 trench gate architecture for improved ruggedness and reduced gate charge compared to previous generations.
Designed with a robust square Reverse Bias Safe Operating Area (RBSOA) for reliable operation in inductive load applications.

Applications

Industrial motor drives and variable frequency drives
High-frequency power supplies and inverters
Uninterruptible power supply (UPS) systems

Procurement Notes

Verify component authenticity through authorized IXYS distributors or Littelfuse channels, as IXYS has been acquired. Confirm that the specific suffix 'C4' corresponds to the GenX4 generation variant rather than other packaging or thermal options. Request official datasheets to validate RoHS compliance status and ensure the TO-247-3 package matches the intended PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when a 1200V blocking capability is required alongside moderate current handling up to 20A continuous. The GenX4 technology offers lower saturation voltage than older generations, improving efficiency in hard-switching applications. Ensure the thermal management solution can handle the 136W power dissipation rating within the specified junction temperature limits for long-term reliability.

Part Context

This part belongs to the IXYS IXYH series, which focuses on high-voltage IGBTs utilizing advanced thin-wafer technologies. The IXYH20N120C4 specifically represents the fourth generation (GenX4) of these devices, offering enhanced performance metrics over earlier models like the B3 series. It is positioned for applications requiring a balance between low conduction losses and fast switching speeds.